j. tx .i.ii >j , li ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 vhp power transistor BLW60C description n-p-n silicon planar epitaxial transistor intended for use in class-a, b and c operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 v. the transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 v. matched hfe groups are available on request. it has a 3/8" capstan envelope with a ceramic cap. all leads are isolated from the stud. quick reference data r.f. performance up to th = 25 c mode of operation c.w. (class-b) s.s.b. (class-ab) vcc v 12,5 12,5 f mhz 175 1 ,6-28 pl w 45 3-30 (p.e.p.) gl db > 5,0 typ. 19,5 t| % > 75 typ. 35 z| q 1.2+j1.4 zl q 2,6-j1,2 d3 db typ. -33 pin configuration pinning -sot120a. fig.1 simplified outline. sot120a. pin 1 2 3 4 description collector emitter base emitter vi semi-conductors reserves the right to change lest conditions, parameter limin ;md package dimensions without notice inlbrmntion liimiihej by nj semi-conductors a believed tu he both accurate ami reliable ;it the lime uf guing to press. however \ scini-t. (inductors .bstiincs ini responsibility for my errors or omissions discovered in its use nj seini-condtn.t( rs cm:our:iues mi^ti incrs rn \ciih ih;it datasheets ;ire liirrent before p'nciiojr
vhp power transistor BLW60C ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (vbe = 0) peak value collector-emitter voltage (open base) emitter-base voltage (open collector) collector current (average) collector current (peak value); f > 1 mhz r.f. power dissipation (f > 1 mhz); tmb = 25 c storage temperature operating junction temperature vcesm vceo vebo 'c(av) 'cm prf tstg ti max. max. max. max. max. max. -65 to + max. 36 16 4 9 22 100 150 200 v v v a a w c c 102 "c (a) 10 1 mgp47s 'h "^ s 70 c x "" s" s k ?^xjinb . \ \ 25 c 10 vce(v) fig.2 d.c. soar. 102 150 prf (w) 100 50 0 c i confirm ii continu illshort-ti fig.3 f mcp480 ?^ -- --^ --. ?--, in ?*-?? ii i ? ^ -->. .^derate by ( ).38 nik ?**+, ].52\> * *?" ? ' ? ~. nik. ?*-*. \---^ ?^, ) 50 th(.c) 100 ous d.c. operation ous r.f. operation ne operation during mismatch l.f. power dissipation; vce ^ 16,5 v; f > mhz. thermal resistance (dissipation = 40 w; tmb = 88 c, i.e. th = 70 c) from junction to mounting base (d.c. dissipation) from junction to mounting base (r.f. dissipation) from mounting base to heatsink th j-mb(dc) (h j-mb(rf) th mb-h 2,8 k/w 2,05 k/w 0,45 k/w
vhp power transistor BLW60C characteristics tj = 25 c breakdown voltage collector-emitter voltage vbe = 0; lc = 50 ma collector-emitter voltage open base; lc = 100 ma emitter-base voltage open collector; ie = 25 ma collector cut-off current vbe = 0;vce = 15v transient energy l = 25mh;f = 50hz open base -vbe = 1,5v;rbe = 33q d.c. current gain <1> lc = 4 a; vce = 5 v d.c. current gain ratio of matched devices (1) lc = 4 a; vce = 5 v collector-emitter saturation voltage <1' lc= 12,5 a; ib = 2,5 a transition frequency at f = 100 mhz (1> |c = 4a; vce= 12,5v lc= 12,5 a; vce = 12,5v collector capacitance at f = 1 mhz le = le = 0;vcb=15v feedback capacitance at f = 1 mhz lc = 200 ma; vce = 1 5 v collector-stud capacitance note 1 . measured under pulse conditions: tp < 200 [is; 8 < 0,02. v(br)ces v(br)ceo v(br)ebo ices e e i>e hfei/hfe2 vcesat fr fy cc cre ccs > 36 > 16 > 4 < 25 > 8 > 8 typ 50 10 to 80 < 1,2 typ 1,5 typ 650 typ 600 typ 120 < 160 typ 80 typ 2 v v v ma ms ms v mhz mhz pf pf pf pf
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